BSL802SNH6327XTSA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 20V 7.5A TSOP-6
$0.00
Available to order
Reference Price (USD)
3,000+
$0.22387
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The BSL802SNH6327XTSA1 from Infineon Technologies redefines excellence in the Transistors - FETs, MOSFETs - Single classification. This Discrete Semiconductor Product boasts advanced thermal management, high-frequency operation, and exceptional durability. Whether you're designing medical equipment, aerospace systems, or IoT devices, the BSL802SNH6327XTSA1 offers the precision and reliability you need. Trust Infineon Technologies to power your next breakthrough innovation.
Specifications
- Product Status: Obsolete
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20 V
- Current - Continuous Drain (Id) @ 25°C: 7.5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.8V, 2.5V
- Rds On (Max) @ Id, Vgs: 22mOhm @ 7.5A, 2.5V
- Vgs(th) (Max) @ Id: 750mV @ 30µA
- Gate Charge (Qg) (Max) @ Vgs: 4.7 nC @ 2.5 V
- Vgs (Max): ±8V
- Input Capacitance (Ciss) (Max) @ Vds: 1347 pF @ 10 V
- FET Feature: -
- Power Dissipation (Max): 2W (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TSOP6-6
- Package / Case: SOT-23-6 Thin, TSOT-23-6
Related Products
onsemi
CPH6354-TL-W
Alpha & Omega Semiconductor Inc.
AOC2412
Infineon Technologies
IRF7468
IXYS
IXTV18N60P
Infineon Technologies
IRLI2505
Vishay Siliconix
IRF610STRL
Infineon Technologies
SPP20N60C3HKSA1
Infineon Technologies
BSS139L6327HTSA1
Infineon Technologies
SPB100N03S2-03 G
IXYS