BSM100GAL120DLCKHOSA1
Infineon Technologies
Infineon Technologies
IGBT MOD 1200V 205A 835W
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Reference Price (USD)
10+
$81.21500
Exquisite packaging
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Discover the power of Infineon Technologies's BSM100GAL120DLCKHOSA1, a premium IGBT module in the Transistors - IGBTs - Modules classification. This discrete semiconductor solution offers ultra-low conduction losses and avalanche ruggedness for harsh environments. The module's unique selling points include: VCE(sat) negative temperature coefficient, aluminum nitride substrate, and press-pack technology. Major application sectors include rail transportation, marine propulsion, and aerospace power systems. The BSM100GAL120DLCKHOSA1 performs exceptionally well in high-voltage DC transmission and pulsed power applications. With Infineon Technologies's BSM100GAL120DLCKHOSA1, you get unmatched reliability in power electronics designs.
Specifications
- Product Status: Obsolete
- IGBT Type: -
- Configuration: Single Chopper
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 205 A
- Power - Max: 835 W
- Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 100A
- Current - Collector Cutoff (Max): 5 mA
- Input Capacitance (Cies) @ Vce: 6.5 nF @ 25 V
- Input: Standard
- NTC Thermistor: No
- Operating Temperature: -40°C ~ 125°C
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: Module
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