BSM180C12P3C202
Rohm Semiconductor
Rohm Semiconductor
SICFET N-CH 1200V 180A MODULE
$590.40
Available to order
Reference Price (USD)
1+
$590.40000
500+
$584.496
1000+
$578.592
1500+
$572.688
2000+
$566.784
2500+
$560.88
Exquisite packaging
Discount
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Enhance your electronic projects with the BSM180C12P3C202 single MOSFET from Rohm Semiconductor. This Discrete Semiconductor Product excels in power conversion and management, featuring ultra-low RDS(on) and high-speed switching. Its compact design and durability make it suitable for consumer electronics, telecommunications, and computing devices. Trust Rohm Semiconductor's BSM180C12P3C202 for unmatched quality and performance in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss): 1200 V
- Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): -
- Rds On (Max) @ Id, Vgs: -
- Vgs(th) (Max) @ Id: 5.6V @ 50mA
- Gate Charge (Qg) (Max) @ Vgs: -
- Vgs (Max): +22V, -4V
- Input Capacitance (Ciss) (Max) @ Vds: 9000 pF @ 10 V
- FET Feature: -
- Power Dissipation (Max): 880W (Tc)
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Supplier Device Package: Module
- Package / Case: Module
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