BSM180D12P2E002
Rohm Semiconductor
Rohm Semiconductor
1200V, 204A, HALF BRIDGE, SILICO
$811.80
Available to order
Reference Price (USD)
1+
$811.80000
500+
$803.682
1000+
$795.564
1500+
$787.446
2000+
$779.328
2500+
$771.21
Exquisite packaging
Discount
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Optimize your electronic projects with the BSM180D12P2E002 from Rohm Semiconductor, a leading option in the Discrete Semiconductor Products market. As a Transistors - FETs, MOSFETs - Arrays device, it provides fast switching speeds and low conduction losses, essential for high-efficiency applications. Ideal for use in server power supplies, battery management systems, and RF amplifiers, the BSM180D12P2E002 ensures top-notch performance. Rohm Semiconductor's expertise in semiconductor technology guarantees a product you can rely on.
Specifications
- Product Status: Active
- FET Type: 2 N-Channel (Half Bridge)
- FET Feature: Silicon Carbide (SiC)
- Drain to Source Voltage (Vdss): 1200V (1.2kV)
- Current - Continuous Drain (Id) @ 25°C: 204A (Tc)
- Rds On (Max) @ Id, Vgs: -
- Vgs(th) (Max) @ Id: 4V @ 35.2mA
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: 18000pF @ 10V
- Power - Max: 1360W (Tc)
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: Module
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