BSM300C12P3E301
Rohm Semiconductor
Rohm Semiconductor
SICFET N-CH 1200V 300A MODULE
$1,028.57
Available to order
Reference Price (USD)
1+
$1028.57000
500+
$1018.2843
1000+
$1007.9986
1500+
$997.7129
2000+
$987.4272
2500+
$977.1415
Exquisite packaging
Discount
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Meet the BSM300C12P3E301 by Rohm Semiconductor, a high-efficiency single MOSFET engineered for superior performance in the Discrete Semiconductor Products arena. Featuring low gate drive requirements and high switching frequency, this component is perfect for RF applications, power tools, and HVAC systems. The BSM300C12P3E301 stands out in the Transistors - FETs, MOSFETs - Single category for its rugged design and consistent output. Choose quality, choose Rohm Semiconductor.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss): 1200 V
- Current - Continuous Drain (Id) @ 25°C: 300A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): -
- Rds On (Max) @ Id, Vgs: -
- Vgs(th) (Max) @ Id: 5.6V @ 80mA
- Gate Charge (Qg) (Max) @ Vgs: -
- Vgs (Max): +22V, -4V
- Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 10 V
- FET Feature: Standard
- Power Dissipation (Max): 1360W (Tc)
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: -
- Supplier Device Package: Module
- Package / Case: Module
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