BSM600C12P3G201
Rohm Semiconductor
Rohm Semiconductor
SICFET N-CH 1200V 600A MODULE
$1,440.00
Available to order
Reference Price (USD)
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$1,120.00000
Exquisite packaging
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Meet the BSM600C12P3G201 by Rohm Semiconductor, a high-efficiency single MOSFET engineered for superior performance in the Discrete Semiconductor Products arena. Featuring low gate drive requirements and high switching frequency, this component is perfect for RF applications, power tools, and HVAC systems. The BSM600C12P3G201 stands out in the Transistors - FETs, MOSFETs - Single category for its rugged design and consistent output. Choose quality, choose Rohm Semiconductor.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss): 1200 V
- Current - Continuous Drain (Id) @ 25°C: 600A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): -
- Rds On (Max) @ Id, Vgs: -
- Vgs(th) (Max) @ Id: 5.6V @ 182mA
- Gate Charge (Qg) (Max) @ Vgs: -
- Vgs (Max): +22V, -4V
- Input Capacitance (Ciss) (Max) @ Vds: 28000 pF @ 10 V
- FET Feature: -
- Power Dissipation (Max): 2460W (Tc)
- Operating Temperature: 175°C (TJ)
- Mounting Type: Chassis Mount
- Supplier Device Package: Module
- Package / Case: Module
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