BSO330N02KG
Infineon Technologies
Infineon Technologies
N-CHANNEL POWER MOSFET
$0.23
Available to order
Reference Price (USD)
1+
$0.23000
500+
$0.2277
1000+
$0.2254
1500+
$0.2231
2000+
$0.2208
2500+
$0.2185
Exquisite packaging
Discount
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The BSO330N02KG from Infineon Technologies is a versatile and high-efficiency component in the Discrete Semiconductor Products lineup. As part of the Transistors - FETs, MOSFETs - Arrays family, it offers excellent thermal stability and low gate charge, making it ideal for high-power applications. From renewable energy systems to telecommunications infrastructure, the BSO330N02KG provides reliable performance in demanding environments. Choose Infineon Technologies for innovative semiconductor solutions that drive technological advancement.
Specifications
- Product Status: Active
- FET Type: 2 N-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 5.4A
- Rds On (Max) @ Id, Vgs: 30mOhm @ 6.5A, 4.5V
- Vgs(th) (Max) @ Id: 1.2V @ 20µA
- Gate Charge (Qg) (Max) @ Vgs: 4.9nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 730pF @ 10V
- Power - Max: 1.4W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: PG-DSO-8
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