BSO612CVGHUMA1
Infineon Technologies
Infineon Technologies
MOSFET N/P-CH 60V 2A 8-SOIC
$0.00
Available to order
Reference Price (USD)
2,500+
$0.44506
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The BSO612CVGHUMA1 from Infineon Technologies is a versatile and high-efficiency component in the Discrete Semiconductor Products lineup. As part of the Transistors - FETs, MOSFETs - Arrays family, it offers excellent thermal stability and low gate charge, making it ideal for high-power applications. From renewable energy systems to telecommunications infrastructure, the BSO612CVGHUMA1 provides reliable performance in demanding environments. Choose Infineon Technologies for innovative semiconductor solutions that drive technological advancement.
Specifications
- Product Status: Obsolete
- FET Type: N and P-Channel
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 3A, 2A
- Rds On (Max) @ Id, Vgs: 120mOhm @ 3A, 10V
- Vgs(th) (Max) @ Id: 4V @ 20µA
- Gate Charge (Qg) (Max) @ Vgs: 15.5nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 340pF @ 25V
- Power - Max: 2W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: PG-DSO-8
Related Products
Vishay Siliconix
SI4965DY-T1-E3
Vishay Siliconix
SI4561DY-T1-E3
onsemi
FDS3912
Panasonic Electronic Components
UP04878G0L
Rohm Semiconductor
SP8M10FU6TB
IXYS
FMP26-02P
STMicroelectronics
STS7C4F30L
Infineon Technologies
AUIRF7379Q
Vishay Siliconix
SI5511DC-T1-E3
Alpha & Omega Semiconductor Inc.