BSP 52 E6327
Infineon Technologies
Infineon Technologies
TRANS NPN DARL 80V 1A SOT-223
$0.49
Available to order
Reference Price (USD)
1+
$0.49000
500+
$0.4851
1000+
$0.4802
1500+
$0.4753
2000+
$0.4704
2500+
$0.4655
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Experience unmatched performance with the BSP 52 E6327 Bipolar Junction Transistor (BJT) by Infineon Technologies. This single BJT transistor is crafted for high gain and low noise, making it ideal for audio and RF applications. Whether you're working on amplifiers, oscillators, or signal processors, the BSP 52 E6327 delivers exceptional results. Its rugged design ensures reliability in harsh conditions, making it a favorite among engineers. Choose Infineon Technologies for premium discrete semiconductor products that power the future of electronics.
Specifications
- Product Status: Obsolete
- Transistor Type: NPN - Darlington
- Current - Collector (Ic) (Max): 1 A
- Voltage - Collector Emitter Breakdown (Max): 80 V
- Vce Saturation (Max) @ Ib, Ic: 1.8V @ 1mA, 1A
- Current - Collector Cutoff (Max): 10µA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 500mA, 10V
- Power - Max: 1.5 W
- Frequency - Transition: 200MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-261-4, TO-261AA
- Supplier Device Package: PG-SOT223-4
Related Products
Nexperia USA Inc.
PMST5089,115
onsemi
BC558BRL
Nexperia USA Inc.
PBSS303PX,115
Infineon Technologies
BCP5116H6433XTMA1
Sanken
2SA1492
Diodes Incorporated
BCX5310TA
onsemi
BD442
NXP Semiconductors
PMN27XPE115
Diotec Semiconductor
BC847A-AQ
Rohm Semiconductor