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BSP373L6327

Infineon Technologies
BSP373L6327 Preview
Infineon Technologies
N-CHANNEL POWER MOSFET
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Specifications

  • Product Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100 V
  • Current - Continuous Drain (Id) @ 25°C: 1.7A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 300mOhm @ 1.7A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 25 V
  • FET Feature: -
  • Power Dissipation (Max): 1.8W (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-SOT223
  • Package / Case: TO-261-4, TO-261AA

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