BSS123/LF1R
Nexperia USA Inc.
Nexperia USA Inc.
MOSFET N-CH 100V 150MA TO236AB
$0.00
Available to order
Reference Price (USD)
1+
$0.00000
500+
$0
1000+
$0
1500+
$0
2000+
$0
2500+
$0
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The BSS123/LF1R from Nexperia USA Inc. sets new standards in the Transistors - FETs, MOSFETs - Single market. This Discrete Semiconductor Product delivers exceptional performance in switching regulators, class D amplifiers, and power management ICs. Featuring advanced silicon technology and robust packaging, it's built to withstand rigorous operating conditions. When quality matters, professionals turn to Nexperia USA Inc.'s BSS123/LF1R for their critical applications.
Specifications
- Product Status: Obsolete
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 150mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 6Ohm @ 120mA, 10V
- Vgs(th) (Max) @ Id: 2.8V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: -
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 40 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 250mW (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-236AB
- Package / Case: TO-236-3, SC-59, SOT-23-3
Related Products
STMicroelectronics
STD50NH02L-1
onsemi
NTDV2955PT4G
Infineon Technologies
IRF6609TR1
Infineon Technologies
IRFZ48NLPBF
Infineon Technologies
IRFS7430-7PPBF
Taiwan Semiconductor Corporation
TSM10NB60CI C0G
Infineon Technologies
IRF8113
Diodes Incorporated
ZVP0120ASTOB
Infineon Technologies
IRF7707GTRPBF
Alpha & Omega Semiconductor Inc.