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BSS123IXTMA1

Infineon Technologies
BSS123IXTMA1 Preview
Infineon Technologies
100V N-CH SMALL SIGNAL MOSFET IN
$0.42
Available to order
Reference Price (USD)
1+
$0.42000
500+
$0.4158
1000+
$0.4116
1500+
$0.4074
2000+
$0.4032
2500+
$0.399
Exquisite packaging
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Specifications

  • Product Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100 V
  • Current - Continuous Drain (Id) @ 25°C: 190mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Rds On (Max) @ Id, Vgs: 6Ohm @ 190mA, 10V
  • Vgs(th) (Max) @ Id: 1.8V @ 13µA
  • Gate Charge (Qg) (Max) @ Vgs: 0.63 nC @ 10 V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 15 pF @ 50 V
  • FET Feature: -
  • Power Dissipation (Max): 500mW (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-SOT23-3-U01
  • Package / Case: TO-236-3, SC-59, SOT-23-3

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