BSS126SK-13
Diodes Incorporated
Diodes Incorporated
DIODE GP SOT23
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Enhance your electronic projects with the BSS126SK-13 single MOSFET from Diodes Incorporated. This Discrete Semiconductor Product excels in power conversion and management, featuring ultra-low RDS(on) and high-speed switching. Its compact design and durability make it suitable for consumer electronics, telecommunications, and computing devices. Trust Diodes Incorporated's BSS126SK-13 for unmatched quality and performance in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Obsolete
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 30mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 0V, 10V
- Rds On (Max) @ Id, Vgs: 500Ohm @ 16mA, 10V
- Vgs(th) (Max) @ Id: 1.4V @ 8µA
- Gate Charge (Qg) (Max) @ Vgs: 2 nC @ 5 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 30.9 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 1W (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-23-3
- Package / Case: TO-236-3, SC-59, SOT-23-3
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