BSS139H6327XTSA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 250V 100MA SOT23-3
$0.60
Available to order
Reference Price (USD)
3,000+
$0.18116
6,000+
$0.17065
15,000+
$0.16013
30,000+
$0.15277
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Discover the BSS139H6327XTSA1 from Infineon Technologies, a high-performance single MOSFET designed for efficient power management in modern electronics. As part of the Discrete Semiconductor Products category, this transistor offers low on-resistance, fast switching speeds, and excellent thermal stability. Ideal for applications such as power supplies, motor control, and LED lighting, the BSS139H6327XTSA1 ensures reliable performance in demanding environments. Upgrade your circuit designs with Infineon Technologies's cutting-edge technology today.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 250 V
- Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 0V, 10V
- Rds On (Max) @ Id, Vgs: 14Ohm @ 100µA, 10V
- Vgs(th) (Max) @ Id: 1V @ 56µA
- Gate Charge (Qg) (Max) @ Vgs: 3.5 nC @ 5 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 76 pF @ 25 V
- FET Feature: Depletion Mode
- Power Dissipation (Max): 360mW (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-SOT23
- Package / Case: TO-236-3, SC-59, SOT-23-3
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