BSS139IXTMA1
Infineon Technologies
Infineon Technologies
250V N-CH SMALL SIGNAL MOSFET IN
$0.49
Available to order
Reference Price (USD)
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$0.49000
500+
$0.4851
1000+
$0.4802
1500+
$0.4753
2000+
$0.4704
2500+
$0.4655
Exquisite packaging
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Meet the BSS139IXTMA1 by Infineon Technologies, a high-efficiency single MOSFET engineered for superior performance in the Discrete Semiconductor Products arena. Featuring low gate drive requirements and high switching frequency, this component is perfect for RF applications, power tools, and HVAC systems. The BSS139IXTMA1 stands out in the Transistors - FETs, MOSFETs - Single category for its rugged design and consistent output. Choose quality, choose Infineon Technologies.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 250 V
- Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 0V, 10V
- Rds On (Max) @ Id, Vgs: 14Ohm @ 100mA, 10V
- Vgs(th) (Max) @ Id: 1V @ 56µA
- Gate Charge (Qg) (Max) @ Vgs: 2.3 nC @ 5 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 60 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 360mW (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-SOT23-3-U01
- Package / Case: TO-236-3, SC-59, SOT-23-3
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