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BSS169 E6327

Infineon Technologies
BSS169 E6327 Preview
Infineon Technologies
MOSFET N-CH 100V 170MA SOT23-3
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Specifications

  • Product Status: Obsolete
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100 V
  • Current - Continuous Drain (Id) @ 25°C: 170mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 0V, 10V
  • Rds On (Max) @ Id, Vgs: 6Ohm @ 170mA, 10V
  • Vgs(th) (Max) @ Id: 1.8V @ 50µA
  • Gate Charge (Qg) (Max) @ Vgs: 2.8 nC @ 7 V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 68 pF @ 25 V
  • FET Feature: Depletion Mode
  • Power Dissipation (Max): 360mW (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-SOT23
  • Package / Case: TO-236-3, SC-59, SOT-23-3

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