BSS214NW L6327
Infineon Technologies
Infineon Technologies
MOSFET N-CH 20V 1.5A SOT323-3
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Enhance your electronic projects with the BSS214NW L6327 single MOSFET from Infineon Technologies. This Discrete Semiconductor Product excels in power conversion and management, featuring ultra-low RDS(on) and high-speed switching. Its compact design and durability make it suitable for consumer electronics, telecommunications, and computing devices. Trust Infineon Technologies's BSS214NW L6327 for unmatched quality and performance in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Obsolete
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20 V
- Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
- Rds On (Max) @ Id, Vgs: 140mOhm @ 1.5A, 4.5V
- Vgs(th) (Max) @ Id: 1.2V @ 3.7µA
- Gate Charge (Qg) (Max) @ Vgs: 0.8 nC @ 5 V
- Vgs (Max): ±12V
- Input Capacitance (Ciss) (Max) @ Vds: 143 pF @ 10 V
- FET Feature: -
- Power Dissipation (Max): 500mW (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-SOT323
- Package / Case: SC-70, SOT-323
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