BSS816NW L6327
Infineon Technologies
Infineon Technologies
MOSFET N-CH 20V 1.4A SOT323-3
$0.00
Available to order
Reference Price (USD)
1+
$0.00000
500+
$0
1000+
$0
1500+
$0
2000+
$0
2500+
$0
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The BSS816NW L6327 from Infineon Technologies sets new standards in the Transistors - FETs, MOSFETs - Single market. This Discrete Semiconductor Product delivers exceptional performance in switching regulators, class D amplifiers, and power management ICs. Featuring advanced silicon technology and robust packaging, it's built to withstand rigorous operating conditions. When quality matters, professionals turn to Infineon Technologies's BSS816NW L6327 for their critical applications.
Specifications
- Product Status: Obsolete
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20 V
- Current - Continuous Drain (Id) @ 25°C: 1.4A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.8V, 2.5V
- Rds On (Max) @ Id, Vgs: 160mOhm @ 1.4A, 2.5V
- Vgs(th) (Max) @ Id: 750mV @ 3.7µA
- Gate Charge (Qg) (Max) @ Vgs: 0.6 nC @ 2.5 V
- Vgs (Max): ±8V
- Input Capacitance (Ciss) (Max) @ Vds: 180 pF @ 10 V
- FET Feature: -
- Power Dissipation (Max): 500mW (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-SOT323
- Package / Case: SC-70, SOT-323
Related Products
onsemi
NVMFS5A160PLZWFT1G
Infineon Technologies
IRF6720S2TRPBF
onsemi
FQPF11N40T
onsemi
FQPF13N50C_F105
Vishay Siliconix
SIA462DJ-T4-GE3
Infineon Technologies
AUIRLS3114Z
Infineon Technologies
IRFS23N15DTRLP
onsemi
HUFA75343S3S
Rohm Semiconductor
RCD040N25TL
Fairchild Semiconductor