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BST82,215

Nexperia USA Inc.
BST82,215 Preview
Nexperia USA Inc.
MOSFET N-CH 100V 190MA TO236AB
$0.41
Available to order
Reference Price (USD)
3,000+
$0.12823
6,000+
$0.12190
15,000+
$0.11241
30,000+
$0.10609
75,000+
$0.09660
Exquisite packaging
Discount
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Specifications

  • Product Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100 V
  • Current - Continuous Drain (Id) @ 25°C: 190mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 5V
  • Rds On (Max) @ Id, Vgs: 10Ohm @ 150mA, 5V
  • Vgs(th) (Max) @ Id: 2V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 40 pF @ 10 V
  • FET Feature: -
  • Power Dissipation (Max): 830mW (Tc)
  • Operating Temperature: -65°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-236AB
  • Package / Case: TO-236-3, SC-59, SOT-23-3

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