BSZ065N06LS5ATMA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 60V 40A TSDSON
$1.61
Available to order
Reference Price (USD)
5,000+
$0.48952
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Enhance your electronic projects with the BSZ065N06LS5ATMA1 single MOSFET from Infineon Technologies. This Discrete Semiconductor Product excels in power conversion and management, featuring ultra-low RDS(on) and high-speed switching. Its compact design and durability make it suitable for consumer electronics, telecommunications, and computing devices. Trust Infineon Technologies's BSZ065N06LS5ATMA1 for unmatched quality and performance in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 6.5mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id: 2.3V @ 20µA
- Gate Charge (Qg) (Max) @ Vgs: 4.1 nC @ 4.5 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 30 V
- FET Feature: Standard
- Power Dissipation (Max): 46W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TSDSON-8-FL
- Package / Case: 8-PowerTDFN
Related Products
Diodes Incorporated
BSS127S-7
Diodes Incorporated
DMN3112SQ-7
Infineon Technologies
IPD70R1K4P7SAUMA1
Alpha & Omega Semiconductor Inc.
AOT292L
Fairchild Semiconductor
FCPF11N65
Renesas Electronics America Inc
RJK03M5DNS-00#J5
Fairchild Semiconductor
FDS7764S
Nexperia USA Inc.
PSMN7R5-60YLX
IXYS
IXFA30N25X3
Infineon Technologies