BSZ0702LSATMA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 60V 17A/40A TSDSON
$1.37
Available to order
Reference Price (USD)
1+
$1.37000
500+
$1.3563
1000+
$1.3426
1500+
$1.3289
2000+
$1.3152
2500+
$1.3015
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Meet the BSZ0702LSATMA1 by Infineon Technologies, a high-efficiency single MOSFET engineered for superior performance in the Discrete Semiconductor Products arena. Featuring low gate drive requirements and high switching frequency, this component is perfect for RF applications, power tools, and HVAC systems. The BSZ0702LSATMA1 stands out in the Transistors - FETs, MOSFETs - Single category for its rugged design and consistent output. Choose quality, choose Infineon Technologies.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 40A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 4mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id: 2.3V @ 36µA
- Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 4.5 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 3100 pF @ 30 V
- FET Feature: -
- Power Dissipation (Max): 2.1W (Ta), 69W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TDSON-8 FL
- Package / Case: 8-PowerTDFN
Related Products
Diodes Incorporated
DMP6110SFDF-7
onsemi
MCH3377-TL-H
Vishay Siliconix
SQ4435EY-T1_GE3
Vishay Siliconix
SIHG33N60EF-GE3
onsemi
FQP12N60C
onsemi
FDPF7N60NZ
IXYS
IXFK80N50P
Nexperia USA Inc.
BSS87,115
Infineon Technologies
IRFS4610TRLPBF
onsemi