BSZ0905PNSATMA1
Infineon Technologies
Infineon Technologies
MOSFET P-CH 30V 40A TDSON-8
$0.00
Available to order
Reference Price (USD)
1+
$0.00000
500+
$0
1000+
$0
1500+
$0
2000+
$0
2500+
$0
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The BSZ0905PNSATMA1 by Infineon Technologies is a premium single MOSFET belonging to the Transistors - FETs, MOSFETs - Single classification. Known for its robust construction and high efficiency, this component is perfect for switching and amplification tasks. Key features include low gate charge, high current capability, and superior thermal performance. Commonly used in automotive systems, industrial automation, and renewable energy solutions, the BSZ0905PNSATMA1 is a versatile choice for engineers seeking top-tier Discrete Semiconductor Products.
Specifications
- Product Status: Active
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Rds On (Max) @ Id, Vgs: 8.6mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id: 1.9V @ 105µA
- Gate Charge (Qg) (Max) @ Vgs: 43.2 nC @ 10 V
- Vgs (Max): ±25V
- Input Capacitance (Ciss) (Max) @ Vds: 3190 pF @ 15 V
- FET Feature: -
- Power Dissipation (Max): 69W (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TDSON-8
- Package / Case: 8-PowerTDFN
Related Products
onsemi
NTMFS4946NT3G
onsemi
NTMFS4C290NT1G
Infineon Technologies
IPP90N06S4L04AKSA2
Alpha & Omega Semiconductor Inc.
AON6424A
Vishay Siliconix
2N6661JAN02
Infineon Technologies
IPD50N06S3L-08
onsemi
FDN337N-F169
Vishay Siliconix
IRF737LC
onsemi
IRLR230ATM
onsemi