BSZ0910NDXTMA1
Infineon Technologies
Infineon Technologies
DIFFERENTIATED MOSFETS
$0.55
Available to order
Reference Price (USD)
5,000+
$0.54409
10,000+
$0.52364
Exquisite packaging
Discount
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Upgrade your electronic designs with the BSZ0910NDXTMA1 by Infineon Technologies, a standout in the Discrete Semiconductor Products category. Specifically designed as a Transistors - FETs, MOSFETs - Arrays solution, this component excels in high-frequency applications with its low on-resistance and fast switching capabilities. Perfect for use in power supplies, motor control, and LED lighting systems, the BSZ0910NDXTMA1 ensures energy efficiency and robust performance. Infineon Technologies's commitment to quality makes this MOSFET array a top choice for engineers and designers worldwide.
Specifications
- Product Status: Obsolete
- FET Type: 2 N-Channel (Dual)
- FET Feature: Logic Level Gate, 4.5V Drive
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta), 25A (Tc)
- Rds On (Max) @ Id, Vgs: 9.5mOhm @ 9A, 10V
- Vgs(th) (Max) @ Id: 2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 5.6nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 800pF @ 15V
- Power - Max: 1.9W (Ta), 31W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-PowerVDFN
- Supplier Device Package: PG-WISON-8
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