BSZ105N04NSGATMA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 40V 11A/40A 8TSDSON
$0.00
Available to order
Reference Price (USD)
5,000+
$0.22936
10,000+
$0.21354
25,000+
$0.20247
Exquisite packaging
Discount
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The BSZ105N04NSGATMA1 from Infineon Technologies redefines excellence in the Transistors - FETs, MOSFETs - Single classification. This Discrete Semiconductor Product boasts advanced thermal management, high-frequency operation, and exceptional durability. Whether you're designing medical equipment, aerospace systems, or IoT devices, the BSZ105N04NSGATMA1 offers the precision and reliability you need. Trust Infineon Technologies to power your next breakthrough innovation.
Specifications
- Product Status: Obsolete
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40 V
- Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 40A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 10.5mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id: 4V @ 14µA
- Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 20 V
- FET Feature: -
- Power Dissipation (Max): 2.1W (Ta), 35W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TSDSON-8
- Package / Case: 8-PowerTDFN
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