BSZ165N04NSGATMA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 40V 8.9A/31A TSDSON
$0.00
Available to order
Reference Price (USD)
5,000+
$0.30413
10,000+
$0.29286
25,000+
$0.28672
Exquisite packaging
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Optimize your power electronics with the BSZ165N04NSGATMA1 single MOSFET from Infineon Technologies. As a key player in the Discrete Semiconductor Products market, this component delivers high voltage tolerance and minimal power loss. Ideal for applications like solar inverters, electric vehicles, and robotics, the BSZ165N04NSGATMA1 combines cutting-edge technology with Infineon Technologies's renowned craftsmanship. Experience superior performance in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Obsolete
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40 V
- Current - Continuous Drain (Id) @ 25°C: 8.9A (Ta), 31A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 16.5mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id: 4V @ 10µA
- Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 840 pF @ 20 V
- FET Feature: -
- Power Dissipation (Max): 2.1W (Ta), 25W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TSDSON-8
- Package / Case: 8-PowerTDFN
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