BTS110NKSA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 100V 10A TO220AB
$3.59
Available to order
Reference Price (USD)
1+
$3.59000
500+
$3.5541
1000+
$3.5182
1500+
$3.4823
2000+
$3.4464
2500+
$3.4105
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Optimize your power electronics with the BTS110NKSA1 single MOSFET from Infineon Technologies. As a key player in the Discrete Semiconductor Products market, this component delivers high voltage tolerance and minimal power loss. Ideal for applications like solar inverters, electric vehicles, and robotics, the BTS110NKSA1 combines cutting-edge technology with Infineon Technologies's renowned craftsmanship. Experience superior performance in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Obsolete
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): -
- Rds On (Max) @ Id, Vgs: 200mOhm @ 5A, 10V
- Vgs(th) (Max) @ Id: 3.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: -
- Vgs (Max): -
- Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220AB
- Package / Case: TO-220-3
Related Products
Diodes Incorporated
DMT10H072LFDFQ-7
Microchip Technology
APT20M45BVFRG
Toshiba Semiconductor and Storage
TPW4R008NH,L1Q
Infineon Technologies
BSC010N04LSIATMA1
STMicroelectronics
STF12N65M5
Toshiba Semiconductor and Storage
TK22A65X,S5X
Vishay Siliconix
IRFR120PBF-BE3
Vishay Siliconix
IRFPG30PBF
Infineon Technologies
IPDD60R125CFD7XTMA1
Alpha & Omega Semiconductor Inc.