BTS244ZE3062AATMA2
Infineon Technologies
Infineon Technologies
MOSFET N-CH 55V 35A TO263-5
$5.34
Available to order
Reference Price (USD)
1,000+
$2.19265
Exquisite packaging
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Discover the BTS244ZE3062AATMA2 from Infineon Technologies, a high-performance single MOSFET designed for efficient power management in modern electronics. As part of the Discrete Semiconductor Products category, this transistor offers low on-resistance, fast switching speeds, and excellent thermal stability. Ideal for applications such as power supplies, motor control, and LED lighting, the BTS244ZE3062AATMA2 ensures reliable performance in demanding environments. Upgrade your circuit designs with Infineon Technologies's cutting-edge technology today.
Specifications
- Product Status: Not For New Designs
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 55 V
- Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 13mOhm @ 19A, 10V
- Vgs(th) (Max) @ Id: 2V @ 130µA
- Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 2660 pF @ 25 V
- FET Feature: Temperature Sensing Diode
- Power Dissipation (Max): 170W (Tc)
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TO263-5-2
- Package / Case: TO-263-5, D²Pak (4 Leads + Tab), TO-263BB
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