BTS282Z E3180A
Infineon Technologies
Infineon Technologies
MOSFET N-CH 49V 80A TO220-7
$0.00
Available to order
Reference Price (USD)
1+
$0.00000
500+
$0
1000+
$0
1500+
$0
2000+
$0
2500+
$0
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Discover the BTS282Z E3180A from Infineon Technologies, a high-performance single MOSFET designed for efficient power management in modern electronics. As part of the Discrete Semiconductor Products category, this transistor offers low on-resistance, fast switching speeds, and excellent thermal stability. Ideal for applications such as power supplies, motor control, and LED lighting, the BTS282Z E3180A ensures reliable performance in demanding environments. Upgrade your circuit designs with Infineon Technologies's cutting-edge technology today.
Specifications
- Product Status: Obsolete
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 49 V
- Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 6.5mOhm @ 36A, 10V
- Vgs(th) (Max) @ Id: 2V @ 240µA
- Gate Charge (Qg) (Max) @ Vgs: 232 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 4800 pF @ 25 V
- FET Feature: Temperature Sensing Diode
- Power Dissipation (Max): 300W (Tc)
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TO220-7-180
- Package / Case: TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
Related Products
Vishay Siliconix
SI4411DY-T1-GE3
Fairchild Semiconductor
FDP13AN06A0_NL
Alpha & Omega Semiconductor Inc.
AOD9T40P
Vishay Siliconix
SI3447CDV-T1-GE3
NXP USA Inc.
BUK7Y25-40B/C3115
Vishay Siliconix
SI5433BDC-T1-GE3
onsemi
NVTFS5820NLWFTWG
Infineon Technologies
IRLR120NTRR
Vishay Siliconix
SI7384DP-T1-E3
Vishay Siliconix