BU406D
NTE Electronics, Inc
NTE Electronics, Inc
TRANS NPN 200V 7A TO220
$3.06
Available to order
Reference Price (USD)
1+
$3.06000
500+
$3.0294
1000+
$2.9988
1500+
$2.9682
2000+
$2.9376
2500+
$2.907
Exquisite packaging
Discount
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Enhance your circuit designs with the BU406D Bipolar Junction Transistor (BJT) from NTE Electronics, Inc. This single BJT transistor offers exceptional performance in amplification and switching applications. Its high gain and low power dissipation make it suitable for use in audio equipment, sensors, and communication devices. The BU406D is built to withstand harsh environments, ensuring reliability in industrial and consumer applications. Trust NTE Electronics, Inc to deliver high-quality discrete semiconductor products that meet your technical requirements.
Specifications
- Product Status: Active
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 7 A
- Voltage - Collector Emitter Breakdown (Max): 200 V
- Vce Saturation (Max) @ Ib, Ic: 1V @ 650mA, 5A
- Current - Collector Cutoff (Max): 15mA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 2A, 5V
- Power - Max: 60 W
- Frequency - Transition: 10MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-220-3
- Supplier Device Package: TO-220
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