BU4S11G2-TR
Rohm Semiconductor
Rohm Semiconductor
IC GATE NAND 1CH 2-INP 5SSOP
$0.91
Available to order
Reference Price (USD)
3,000+
$0.31349
6,000+
$0.30268
Exquisite packaging
Discount
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Rohm Semiconductor's BU4S11G2-TR represents the pinnacle of Logic - Gates and Inverters innovation. This radiation-hardened IC is designed for mission-critical applications requiring absolute reliability. Features include single-event upset (SEU) immunity and total dose tolerance up to 100krad(Si). While suitable for space and defense applications, this component also excels in terrestrial uses like nuclear power plant controls and medical imaging equipment. The BU4S11G2-TR undergoes rigorous testing including burn-in and temperature cycling to ensure performance under extreme conditions. Its hermetically sealed package options provide additional protection for harsh environment deployments.
Specifications
- Product Status: Active
- Logic Type: NAND Gate
- Number of Circuits: 1
- Number of Inputs: 2
- Features: -
- Voltage - Supply: 3V ~ 16V
- Current - Quiescent (Max): 1 µA
- Current - Output High, Low: 3.4mA, 3.4mA
- Logic Level - Low: 1.5V ~ 4V
- Logic Level - High: 3.5V ~ 11V
- Max Propagation Delay @ V, Max CL: 30ns @ 15V, 50pF
- Operating Temperature: -40°C ~ 85°C
- Mounting Type: Surface Mount
- Supplier Device Package: 5-SSOP
- Package / Case: SC-74A, SOT-753
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