BU808DFI
STMicroelectronics
STMicroelectronics
TRANS NPN DARL 700V ISOWATT218
$0.00
Available to order
Reference Price (USD)
300+
$4.17637
Exquisite packaging
Discount
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The BU808DFI Bipolar Junction Transistor (BJT) by STMicroelectronics is a versatile component in the discrete semiconductor products category. Designed for single-stage amplification and switching, this BJT transistor is widely used in medical devices, instrumentation, and power electronics. With its excellent thermal stability and low leakage current, the BU808DFI provides consistent performance in demanding applications. Choose STMicroelectronics for cutting-edge semiconductor solutions that drive innovation and efficiency in your projects.
Specifications
- Product Status: Obsolete
- Transistor Type: NPN - Darlington
- Current - Collector (Ic) (Max): 8 A
- Voltage - Collector Emitter Breakdown (Max): 700 V
- Vce Saturation (Max) @ Ib, Ic: 1.6V @ 500mA, 5A
- Current - Collector Cutoff (Max): 400µA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5A, 5V
- Power - Max: 52 W
- Frequency - Transition: -
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: ISOWATT-218-3
- Supplier Device Package: ISOWATT-218
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