BUK764R0-75C,118
NXP USA Inc.
NXP USA Inc.
PFET, 100A I(D), 75V, 0.004OHM,
$0.00
Available to order
Reference Price (USD)
800+
$1.31254
1,600+
$1.20454
2,400+
$1.12147
5,600+
$1.07994
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Meet the BUK764R0-75C,118 by NXP USA Inc., a high-efficiency single MOSFET engineered for superior performance in the Discrete Semiconductor Products arena. Featuring low gate drive requirements and high switching frequency, this component is perfect for RF applications, power tools, and HVAC systems. The BUK764R0-75C,118 stands out in the Transistors - FETs, MOSFETs - Single category for its rugged design and consistent output. Choose quality, choose NXP USA Inc..
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 75 V
- Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 4mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id: 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 142 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 11659 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 333W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D2PAK
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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