BUK7Y14-80EX
Nexperia USA Inc.
Nexperia USA Inc.
MOSFET N-CH 80V 65A LFPAK56
$1.27
Available to order
Reference Price (USD)
1,500+
$0.44765
3,000+
$0.41780
7,500+
$0.39691
10,500+
$0.38199
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Enhance your electronic projects with the BUK7Y14-80EX single MOSFET from Nexperia USA Inc.. This Discrete Semiconductor Product excels in power conversion and management, featuring ultra-low RDS(on) and high-speed switching. Its compact design and durability make it suitable for consumer electronics, telecommunications, and computing devices. Trust Nexperia USA Inc.'s BUK7Y14-80EX for unmatched quality and performance in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 80 V
- Current - Continuous Drain (Id) @ 25°C: 65A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 14mOhm @ 15A, 10V
- Vgs(th) (Max) @ Id: 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 44.8 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 3155 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 147W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: LFPAK56, Power-SO8
- Package / Case: SC-100, SOT-669
Related Products
Diodes Incorporated
DMN5L06KQ-7
Vishay Siliconix
IRFZ44PBF
onsemi
FDP054N10
Diodes Incorporated
DMS2220LFDB-7
Infineon Technologies
IPB120P04P404ATMA1
Nexperia USA Inc.
PMN100EPAX
Microchip Technology
APT19F100J
Diodes Incorporated
DMT10H009LK3-13
Infineon Technologies
IAUC100N04S6N022ATMA1
Vishay Siliconix