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BUK9509-55A,127

NXP USA Inc.
BUK9509-55A,127 Preview
NXP USA Inc.
MOSFET N-CH 55V 75A TO220AB
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Specifications

  • Product Status: Obsolete
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 55 V
  • Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Rds On (Max) @ Id, Vgs: 8mOhm @ 25A, 10V
  • Vgs(th) (Max) @ Id: 2V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 5 V
  • Vgs (Max): ±15V
  • Input Capacitance (Ciss) (Max) @ Vds: 4633 pF @ 25 V
  • FET Feature: -
  • Power Dissipation (Max): 211W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220AB
  • Package / Case: TO-220-3

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