BUK9629-100B,118
Nexperia USA Inc.
Nexperia USA Inc.
MOSFET N-CH 100V 46A D2PAK
$1.77
Available to order
Reference Price (USD)
800+
$0.63106
1,600+
$0.57024
2,400+
$0.53223
5,600+
$0.50561
20,000+
$0.48661
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The BUK9629-100B,118 from Nexperia USA Inc. redefines excellence in the Transistors - FETs, MOSFETs - Single classification. This Discrete Semiconductor Product boasts advanced thermal management, high-frequency operation, and exceptional durability. Whether you're designing medical equipment, aerospace systems, or IoT devices, the BUK9629-100B,118 offers the precision and reliability you need. Trust Nexperia USA Inc. to power your next breakthrough innovation.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 46A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
- Rds On (Max) @ Id, Vgs: 27mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id: 2V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 5 V
- Vgs (Max): ±15V
- Input Capacitance (Ciss) (Max) @ Vds: 4360 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 157W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D2PAK
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Related Products
onsemi
NTLUS3A18PZTBG
Taiwan Semiconductor Corporation
TQM025NB04CR RLG
Nexperia USA Inc.
BUK9M20-40HX
Nexperia USA Inc.
2N7002,235
Rectron USA
RM110N82T2
Vishay Siliconix
IRFS9N60ATRLPBF
Microchip Technology
VN3205N3-G-P002
Vishay Siliconix
SI2333DS-T1-BE3
onsemi
NVBGS6D5N15MC
Vishay Siliconix