BUK98180-100A,115
NXP USA Inc.
NXP USA Inc.
MOSFET N-CH 100V 4.6A SOT-223
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Optimize your power electronics with the BUK98180-100A,115 single MOSFET from NXP USA Inc.. As a key player in the Discrete Semiconductor Products market, this component delivers high voltage tolerance and minimal power loss. Ideal for applications like solar inverters, electric vehicles, and robotics, the BUK98180-100A,115 combines cutting-edge technology with NXP USA Inc.'s renowned craftsmanship. Experience superior performance in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Obsolete
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 4.6A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 173mOhm @ 5A, 10V
- Vgs(th) (Max) @ Id: 2V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: -
- Vgs (Max): ±10V
- Input Capacitance (Ciss) (Max) @ Vds: 619 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 8W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SC-73
- Package / Case: TO-261-4, TO-261AA
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