BUT12AI,127
NXP USA Inc.
NXP USA Inc.
TRANS NPN 450V 8A TO220AB
$0.00
Available to order
Reference Price (USD)
1+
$0.00000
500+
$0
1000+
$0
1500+
$0
2000+
$0
2500+
$0
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The BUT12AI,127 Bipolar Junction Transistor (BJT) from NXP USA Inc. is a standout in the discrete semiconductor products category. Designed for single-stage amplification and high-speed switching, this BJT transistor is widely used in automotive, aerospace, and consumer electronics. With its excellent thermal performance and high current capacity, the BUT12AI,127 is a reliable component for demanding applications. NXP USA Inc.'s dedication to innovation ensures that this transistor meets the evolving needs of the electronics industry. Elevate your designs with this high-performance BJT transistor.
Specifications
- Product Status: Obsolete
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 8 A
- Voltage - Collector Emitter Breakdown (Max): 450 V
- Vce Saturation (Max) @ Ib, Ic: 1.5V @ 860mA, 5A
- Current - Collector Cutoff (Max): 1mA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 14 @ 1A, 5V
- Power - Max: 110 W
- Frequency - Transition: -
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-220-3
- Supplier Device Package: TO-220AB
Related Products
Fairchild Semiconductor
KSC1009YTA
Micro Commercial Co
SS8550-D-AP
Rohm Semiconductor
2SB1308T100P
Fairchild Semiconductor
2N5088BU
Micro Commercial Co
2SD1138-C-BP
Microchip Technology
JANTXV2N3737
onsemi
MSB92AS1WT1G
Diodes Incorporated
DCX68-25-13
STMicroelectronics
MJ4035
Infineon Technologies