Shopping cart

Subtotal: $0.00

BUZ30AH3045AATMA1

Infineon Technologies
BUZ30AH3045AATMA1 Preview
Infineon Technologies
MOSFET N-CH 200V 21A D2PAK
$0.69
Available to order
Reference Price (USD)
1,000+
$1.12703
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram

Specifications

  • Product Status: Obsolete
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 200 V
  • Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 130mOhm @ 13.5A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 25 V
  • FET Feature: -
  • Power Dissipation (Max): 125W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TO263-3
  • Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Related Products

Diodes Incorporated

ZXMN10A08E6QTA

Vishay Siliconix

SI4838DY-T1-E3

STMicroelectronics

STD3N40K3

Toshiba Semiconductor and Storage

TK5R1P08QM,RQ

Infineon Technologies

IRFS7540TRLPBF

Nexperia USA Inc.

PSMN012-80PS,127

Fairchild Semiconductor

HUF75343G3

Vishay Siliconix

SISH625DN-T1-GE3

Nexperia USA Inc.

PSMN016-100BS,118

Top