Shopping cart

Subtotal: $0.00

BY229X-800,127

NXP USA Inc.
BY229X-800,127 Preview
NXP USA Inc.
DIODE GEN PURP 600V 8A TO220F
$0.00
Available to order
Reference Price (USD)
1+
$0.00000
500+
$0
1000+
$0
1500+
$0
2000+
$0
2500+
$0
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram

Specifications

  • Product Status: Obsolete
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600 V
  • Current - Average Rectified (Io): 8A
  • Voltage - Forward (Vf) (Max) @ If: 1.85 V @ 20 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 135 ns
  • Current - Reverse Leakage @ Vr: 400 µA @ 600 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2 Full Pack
  • Supplier Device Package: TO-220FP
  • Operating Temperature - Junction: 150°C (Max)

Related Products

Microsemi Corporation

SK32B/TR13

Vishay General Semiconductor - Diodes Division

VS-15ETH06-1PBF

Vishay General Semiconductor - Diodes Division

GI250-4HE3/54

Taiwan Semiconductor Corporation

HS3K M6G

Taiwan Semiconductor Corporation

HER303G B0G

Nexperia USA Inc.

BAS321-QF

Panasonic Electronic Components

MA2C029WAF

Rohm Semiconductor

1SR153-400T-32

Taiwan Semiconductor Corporation

3A60 B0G

Top