Shopping cart

Subtotal: $0.00

BYG10KHM3_A/I

Vishay General Semiconductor - Diodes Division
BYG10KHM3_A/I Preview
Vishay General Semiconductor - Diodes Division
DIODE AVALANCHE 800V 1.5A DO214
$0.16
Available to order
Reference Price (USD)
15,000+
$0.15322
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram

Specifications

  • Product Status: Active
  • Diode Type: Avalanche
  • Voltage - DC Reverse (Vr) (Max): 800 V
  • Current - Average Rectified (Io): 1.5A
  • Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 1.5 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 4 µs
  • Current - Reverse Leakage @ Vr: 1 µA @ 800 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AC, SMA
  • Supplier Device Package: DO-214AC (SMA)
  • Operating Temperature - Junction: -55°C ~ 150°C

Related Products

Microchip Technology

UES1301SM/TR

Microchip Technology

JTXM19500/483-02

Microchip Technology

HSM180GE3/TR13

Microchip Technology

S34130

Powerex Inc.

R7000803XXUA

Sanken

EM 2AV

Microchip Technology

JAN1N3890R

GeneSiC Semiconductor

FR85BR02

Comchip Technology

ACFRA106-HF

Vishay General Semiconductor - Diodes Division

VS-65APS16L-M3

Top