BYG10MHM3_A/H
Vishay General Semiconductor - Diodes Division
Vishay General Semiconductor - Diodes Division
DIODE AVALANCHE 1KV 1.5A DO214AC
$0.16
Available to order
Reference Price (USD)
12,600+
$0.15811
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The BYG10MHM3_A/H single rectifier diode by Vishay General Semiconductor - Diodes Division is a standout in the Diodes - Rectifiers - Single classification. Known for its robust construction and high rectification efficiency, it is perfect for demanding applications like electric vehicle charging stations and industrial robotics. Its low power dissipation and high thermal stability ensure optimal performance in data storage systems and server farms. The BYG10MHM3_A/H is also used in consumer gadgets, such as smartphones and tablets, highlighting its adaptability. Vishay General Semiconductor - Diodes Division's BYG10MHM3_A/H is the ultimate solution for high-performance rectification needs.
Specifications
- Product Status: Active
- Diode Type: Avalanche
- Voltage - DC Reverse (Vr) (Max): 1000 V
- Current - Average Rectified (Io): 1.5A
- Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 1.5 A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 4 µs
- Current - Reverse Leakage @ Vr: 1 µA @ 1000 V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: DO-214AC, SMA
- Supplier Device Package: DO-214AC (SMA)
- Operating Temperature - Junction: -55°C ~ 150°C
Related Products
Microchip Technology
JANTX1N3595A-1
Semtech Corporation
SCSF4R
GeneSiC Semiconductor
S85Y
IXYS
W3082MC450
GeneSiC Semiconductor
GKR240/04
Microchip Technology
R50440
Microchip Technology
JANTXV1N6912UTK2/TR
Powerex Inc.
A187RP
Vishay General Semiconductor - Diodes Division
EGL41GHE3_A/I
Vishay General Semiconductor - Diodes Division