BYG20J-E3/TR

Vishay General Semiconductor - Diodes Division

Manufacturer

Vishay General Semiconductor - Diodes Division

Description:

DIODE AVALANCHE 600V 1.5A

Datasheet:

BYG20J-E3/TR Datasheet

$0.42

Available to order

Reference Price (USD)

1,800+

$0.12911

3,600+

$0.11957

5,400+

$0.11321

12,600+

$0.10685

45,000+

$0.10367

Exquisite packaging

Discount

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Discover the BYG20J-E3/TR single rectifier diode by Vishay General Semiconductor - Diodes Division, a key component in the Diodes - Rectifiers - Single classification. This diode excels in providing stable and efficient rectification for circuits requiring precise voltage control. With its high surge current capability and low leakage, it is perfect for use in power management systems, LED drivers, and battery chargers. The BYG20J-E3/TR is widely utilized in telecommunications, renewable energy systems, and medical devices, ensuring reliable operation under varying load conditions. Choose Vishay General Semiconductor - Diodes Division's BYG20J-E3/TR for unmatched quality and performance in discrete semiconductor solutions.

Specifications

Product Status: Active
Diode Type: Avalanche
Voltage - DC Reverse (Vr) (Max): 600 V
Current - Average Rectified (Io): 1.5A
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1.5 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C

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BYG20J-E3/TR

Reference Price (USD)

Specifications

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