BYG23T-M3/TR
Vishay General Semiconductor - Diodes Division
Vishay General Semiconductor - Diodes Division
DIODE AVALANCHE 1300V 1A DO214AC
$0.57
Available to order
Reference Price (USD)
1,800+
$0.17986
3,600+
$0.16657
5,400+
$0.15771
12,600+
$0.14885
45,000+
$0.14442
Exquisite packaging
Discount
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Maximize your device's efficiency with the BYG23T-M3/TR single rectifier diode from Vishay General Semiconductor - Diodes Division. This Discrete Semiconductor Product is crafted for precision, offering fast recovery times and high current handling. It is ideal for use in power supplies, motor controls, and lighting systems, where energy efficiency is crucial. The BYG23T-M3/TR is also employed in agricultural machinery and marine electronics, proving its versatility across industries. Vishay General Semiconductor - Diodes Division's BYG23T-M3/TR is synonymous with reliability, making it a trusted choice for engineers worldwide.
Specifications
- Product Status: Active
- Diode Type: Avalanche
- Voltage - DC Reverse (Vr) (Max): 1300 V
- Current - Average Rectified (Io): 1A (DC)
- Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 1 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 75 ns
- Current - Reverse Leakage @ Vr: 5 µA @ 1300 V
- Capacitance @ Vr, F: 9pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: DO-214AC, SMA
- Supplier Device Package: DO-214AC (SMA)
- Operating Temperature - Junction: -55°C ~ 150°C
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