BYM12-400HE3_A/H
Vishay General Semiconductor - Diodes Division
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 400V 1A DO213AB
$0.14
Available to order
Reference Price (USD)
9,000+
$0.12865
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The BYM12-400HE3_A/H from Vishay General Semiconductor - Diodes Division is a high-performance single rectifier diode designed for efficient power conversion in various electronic applications. As part of the Discrete Semiconductor Products category, this diode ensures reliable and fast switching, making it ideal for power supplies, inverters, and converters. Its robust construction and low forward voltage drop minimize energy loss, enhancing overall system efficiency. Common applications include AC/DC conversion, voltage clamping, and reverse polarity protection in automotive, industrial, and consumer electronics. Trust Vishay General Semiconductor - Diodes Division's BYM12-400HE3_A/H for superior performance and durability in demanding environments.
Specifications
- Product Status: Active
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 400 V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 1 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 50 ns
- Current - Reverse Leakage @ Vr: 5 µA @ 400 V
- Capacitance @ Vr, F: 14pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: DO-213AB, MELF (Glass)
- Supplier Device Package: DO-213AB
- Operating Temperature - Junction: -65°C ~ 175°C
Related Products
Powerex Inc.
RBK84440XXOO
onsemi
PCFFS05120AF
Powerex Inc.
R9G00218XX
Comchip Technology
UF3008-G
Powerex Inc.
R5031213LSWA
GeneSiC Semiconductor
S70DR
Powerex Inc.
R7202206XXOO
Microchip Technology
1N1436
Microchip Technology
UFR3010R
GeneSiC Semiconductor