BYQ28E-200,127
WeEn Semiconductors
WeEn Semiconductors
DIODE ARRAY GP 200V 10A TO220AB
$0.79
Available to order
Reference Price (USD)
1+
$0.68000
10+
$0.59400
100+
$0.45540
500+
$0.36000
1,000+
$0.28800
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The BYQ28E-200,127 from WeEn Semiconductors sets new benchmarks in the Discrete Semiconductor Products market. This rectifier array incorporates advanced epitaxial growth technology for superior reverse recovery characteristics. Perfect for high-efficiency adapters, induction heating, and plasma cutting equipment, it offers outstanding thermal cycling performance. WeEn Semiconductors's rigorous quality control ensures the BYQ28E-200,127 maintains consistent parameters across production batches for design-in reliability.
Specifications
- Product Status: Active
- Diode Configuration: 1 Pair Common Cathode
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 200 V
- Current - Average Rectified (Io) (per Diode): 10A
- Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 10 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 25 ns
- Current - Reverse Leakage @ Vr: 10 µA @ 200 V
- Operating Temperature - Junction: 150°C (Max)
- Mounting Type: Through Hole
- Package / Case: TO-220-3
- Supplier Device Package: TO-220AB
Related Products
Microchip Technology
MBR3060FCTE3/TU
Infineon Technologies
DZ3600S17K3B2NOSA1
Nexperia USA Inc.
1PS70SB86,115
Vishay General Semiconductor - Diodes Division
BYVF32-150HE3_A/P
onsemi
SBAT54SLT1G
Infineon Technologies
BAS70-05B5003
Panjit International Inc.
BD10H150CS_S2_00001
Sanken
FMB-24H
IXYS
DSA60C60PB
SMC Diode Solutions