BYQ28EB-200HE3_A/I
Vishay General Semiconductor - Diodes Division
Vishay General Semiconductor - Diodes Division
DIODE ARRAY GP 200V 5A TO263AB
$0.78
Available to order
Reference Price (USD)
1+
$0.77550
500+
$0.767745
1000+
$0.75999
1500+
$0.752235
2000+
$0.74448
2500+
$0.736725
Exquisite packaging
Discount
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Engineered for excellence, Vishay General Semiconductor - Diodes Division's BYQ28EB-200HE3_A/I represents the next generation of rectifier diode arrays. This Discrete Semiconductor Product features innovative passivation layers that enhance reliability in humid conditions. Its primary applications include marine electronics, oil drilling equipment, and military power systems where corrosion resistance is paramount. With Vishay General Semiconductor - Diodes Division's proprietary screening processes, the BYQ28EB-200HE3_A/I guarantees exceptional performance in the most challenging electrical environments.
Specifications
- Product Status: Active
- Diode Configuration: 1 Pair Common Cathode
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 200 V
- Current - Average Rectified (Io) (per Diode): 5A
- Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 5 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 25 ns
- Current - Reverse Leakage @ Vr: 10 µA @ 200 V
- Operating Temperature - Junction: -40°C ~ 150°C
- Mounting Type: Surface Mount
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
- Supplier Device Package: TO-263AB (D²PAK)
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Vishay General Semiconductor - Diodes Division