Shopping cart

Subtotal: $0.00

BYT51G-TAP

Vishay General Semiconductor - Diodes Division
BYT51G-TAP Preview
Vishay General Semiconductor - Diodes Division
DIODE AVALANCHE 400V 1.5A SOD57
$0.67
Available to order
Reference Price (USD)
25,000+
$0.18900
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram

Specifications

  • Product Status: Active
  • Diode Type: Avalanche
  • Voltage - DC Reverse (Vr) (Max): 400 V
  • Current - Average Rectified (Io): 1.5A
  • Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 4 µs
  • Current - Reverse Leakage @ Vr: 1 µA @ 400 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: SOD-57, Axial
  • Supplier Device Package: SOD-57
  • Operating Temperature - Junction: -55°C ~ 175°C

Related Products

Vishay General Semiconductor - Diodes Division

VS-SD403C08S10C

Vishay General Semiconductor - Diodes Division

MSS2P3-M3/89A

Renesas Electronics America Inc

HSM83JTL-E

Microchip Technology

JANS1N5299UR-1/TR

Microchip Technology

1N5419/TR

Infineon Technologies

IDH09G65C5XKSA2

Solid State Inc.

1N1676

NTE Electronics, Inc

NTE5821

STMicroelectronics

STPSC8065D

Top