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BYV30JT-600PQ

WeEn Semiconductors
BYV30JT-600PQ Preview
WeEn Semiconductors
DIODE GEN PURP 600V 30A TO-3P
$0.00
Available to order
Reference Price (USD)
2,400+
$0.84000
Exquisite packaging
Discount
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Specifications

  • Product Status: Active
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600 V
  • Current - Average Rectified (Io): 30A
  • Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 30 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 65 ns
  • Current - Reverse Leakage @ Vr: 10 µA @ 600 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-3P-3, SC-65-3
  • Supplier Device Package: TO-3P
  • Operating Temperature - Junction: 175°C (Max)

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