BYV32E-300PQ
WeEn Semiconductors
WeEn Semiconductors
DUAL ULTRAFAST POWER DIODE
$0.59
Available to order
Reference Price (USD)
1+
$0.59400
500+
$0.58806
1000+
$0.58212
1500+
$0.57618
2000+
$0.57024
2500+
$0.5643
Exquisite packaging
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The BYV32E-300PQ from WeEn Semiconductors sets new benchmarks in the Discrete Semiconductor Products market. This rectifier array incorporates advanced epitaxial growth technology for superior reverse recovery characteristics. Perfect for high-efficiency adapters, induction heating, and plasma cutting equipment, it offers outstanding thermal cycling performance. WeEn Semiconductors's rigorous quality control ensures the BYV32E-300PQ maintains consistent parameters across production batches for design-in reliability.
Specifications
- Product Status: Active
- Diode Configuration: 1 Pair Common Cathode
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 300 V
- Current - Average Rectified (Io) (per Diode): 10A
- Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 10 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 35 ns
- Current - Reverse Leakage @ Vr: 20 µA @ 300 V
- Operating Temperature - Junction: 175°C (Max)
- Mounting Type: Through Hole
- Package / Case: TO-220-3
- Supplier Device Package: TO-220E
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