BYVB32-200HE3_A/P
Vishay General Semiconductor - Diodes Division
Vishay General Semiconductor - Diodes Division
DIODE ARRAY GP 200V 18A TO263AB
$0.94
Available to order
Reference Price (USD)
1+
$0.94050
500+
$0.931095
1000+
$0.92169
1500+
$0.912285
2000+
$0.90288
2500+
$0.893475
Exquisite packaging
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For engineers specializing in power electronics, the BYVB32-200HE3_A/P by Vishay General Semiconductor - Diodes Division represents the pinnacle of rectifier diode array technology. Part of the essential Discrete Semiconductor Products lineup, this device features parallel diode configurations for increased current handling. Its applications span photovoltaic systems, UPS backups, and industrial automation controls. With Vishay General Semiconductor - Diodes Division's patented junction design, the BYVB32-200HE3_A/P achieves superior heat dissipation and long-term stability under continuous load.
Specifications
- Product Status: Active
- Diode Configuration: 1 Pair Common Cathode
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 200 V
- Current - Average Rectified (Io) (per Diode): 18A
- Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 20 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 25 ns
- Current - Reverse Leakage @ Vr: 10 µA @ 200 V
- Operating Temperature - Junction: -65°C ~ 150°C
- Mounting Type: Surface Mount
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
- Supplier Device Package: TO-263AB (D²PAK)
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